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HS-26CT32RH
Data Sheet August 7, 2008 FN2930.4
Radiation Hardened Quad Differential Line Receiver
The Intersil HS-26CT32RH is a differential line receiver designed for digital data transmission over balanced lines and meets the requirements of EIA standard RS-422. Radiation hardened CMOS processing assures low power consumption, high speed, and reliable operation in the most severe radiation environments. The HS-26CT32RH has an input sensitivity typically of 200mV over the common mode input voltage range of 7V. The receivers are also equipped with input fail safe circuitry, which causes the outputs to go to a logic "1" when the inputs are open. Enable and Disable functions are common to all four receivers. Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC). The SMD numbers listed in the "Ordering Information" must be used when ordering. Detailed Electrical Specifications for these devices are contained in SMD 5962-95631. A "hot-link" is provided on our homepage for downloading. http://www.intersil.com/military/
Features
* Electrically Screened to SMD # 5962-95631 * QML Qualified per MIL-PRF-38535 Requirements * 1.2 Micron Radiation Hardened CMOS - Total Dose . . . . . . . . . . . . . . . . . . . .Up to 300kRAD(Si) * Latch-up Free * EIA RS-422 Compatible Outputs * Operation with TTL Based on VIH = VDD/2 * Input Fail Safe Circuitry * High Impedance Inputs when Disabled or Powered Down * Low Power Dissipation Standby (Max). . . . . . . . . .138mW * Single 5V Supply * Full Military Temperature Range . . . . . . -55C to +125C
Applications
* Line Receiver for MIL-STD-1553 Serial Data Bus * Line Receiver for RS422
Logic Diagram
ENABLE ENABLE DIN DIN CIN CIN BIN BIN AIN AIN
+
-
+
-
+
-
+
-
DOUT
COUT
BOUT
AOUT
Ordering Information
ORDERING NUMBER 5962F9563101QEC 5962F9563101QXC 5962F9563101V9A 5962F9563101VEC 5962F9563101VXC HS1-26CT32RH/PROTO HS9-26CT32RH/PROTO INTERNAL MKT. NUMBER HS1-26CT32RH-8 HS9-26CT32RH-8 HS0-26CT32RH-Q HS1-26CT32RH-Q HS9-26CT32RH-Q HS1-26CT32RH/PROTO HS9-26CT32RH/PROTO Q 5962F95 63101VEC Q 5962F95 63101VXC HS1- 26CT32RH /PROTO HS9- 26CT32RH /PROTO PART MARKING Q 5962F95 63101QEC Q 5962F95 63101QXC TEMP. RANGE (C) -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 -55 to +125 16 Ld SBDIP D16.3 PACKAGE 16 Ld SBDIP PKG. DWG. # D16.3
16 Ld FLATPACK K16.A
16 Ld FLATPACK K16.A 16 Ld SBDIP D16.3
16 Ld FLATPACK K16.A
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2000, 2008. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
HS-26CT32RH Pinouts
HS1-26CT32RH (16 LD SBDIP, CDIP2-T16) TOP VIEW
AIN 1 AIN 2 AOUT 3 ENABLE 4 COUT 5 CIN 6 CIN 7 GND 8 16 VDD 15 BIN 14 BIN 13 BOUT 12 ENABLE 11 DOUT 10 DIN 9 DIN AIN AIN AOUT ENABLE COUT CIN CIN GND
HS9-26CT32RH (16 LD FLATPACK, CDFP4-F16) TOP VIEW
1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 VDD BIN BIN BOUT ENABLE DOUT DIN DIN
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 2
FN2930.4 August 7, 2008
HS-26CT32RH Die Characteristics
DIE DIMENSIONS: 84 mils x 130 mils (2140m x 3290m) INTERFACE MATERIALS: Glassivation: Type: PSG (Phosphorus Silicon Glass) Thickness: 10kA 1kA Top Metallization: M1: Mo/Tiw Thickness: 5800A M2: Al/Si/Cu Thickness: 10kA 1kA Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential: VDD (When Powered Up) ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105A/cm2 Transistor Count: 240 Bond Pad Size: 110m x 100m
Metallization Mask Layout
HS-26CT32RH
AIN (1) VDD (16) BIN (15)
AIN (2)
(14) BIN
AOUT (3)
(13) BOUT
ENAB (4)
(12) ENAB
COUT (5)
(11) DOUT
CIN (6)
(10) DIN
(7) CIN
(8) GND
(9) DIN
3
FN2930.4 August 7, 2008


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